A TiN strapped polysilicon gate cobalt salicide CMOS process

A novel TiN strapped polysilicon gate cobalt salicide process has been developed for a submicron CMOS technology. The resulting MOSFET structure consists of a TiN strapped polysilicon gate electrode and self-aligned cobalt silicided source/drain junctions. This structure provides a low-sheet-resistance polysilicon gate with shallow, low-leakage source/drain junctions, while avoiding the lateral dopant interdiffusion of silicided gates. Furthermore, the TiN strapped layer eliminates cobalt silicide creep and bridging over the oxide sidewall spacers between the gate and source/drain regions.<>