Title :
High temperature SiC Schottky diodes with stable operation for space application
Author :
Banu, V. ; Godignon, P. ; Jorda, X. ; Vellvehi, M. ; Millan, J. ; Brosselard, P. ; Lopez, D. ; Barbero, J.
Author_Institution :
CNM, CSIC, Spain
Abstract :
This work presents the long-term stability of the SiC Schottky diodes able to operate in the temperature range -170°C/280°C, specially developed for the space mission BepiColombo. This mission consists in launching two satellites around the Mercury planet. After a travel of 6 years, the satellites will be orbiting around Mercury at least one year. When orbiting around Mercury, the satellites will experience seasonal eclipses. The numbers of cycles -170°C/280°C are in the range of 4,000. The diodes are used as protection devices for the solar cells arrays. To target this application, we have developed 5A/300V breakdown voltage Silicon Carbide Schottky diodes. Long-term tests demonstrated a very good stability of the electrical, mechanical and thermal parameters.
Keywords :
Schottky diodes; semiconductor device breakdown; silicon compounds; space vehicle electronics; wide band gap semiconductors; SiC; breakdown voltage; current 5 A; electrical parameters; high-temperature Schottky diodes; long-term stability; mechanical parameters; protection devices; seasonal eclipses; silicon carbide Schottky diodes; solar cells arrays; space mission BepiColombo; temperature -170 degC to 280 degC; thermal parameters; voltage 300 V; Bonding; Gold; Schottky diodes; Silicon carbide; Stress; Thermal stability;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650590
