Title :
Stacked-nitride oxide gate MISFET with high hot-carrier-immunity
Author :
Iwai, H. ; Momose, H.S. ; Morimoto, T. ; Ozawa, Y. ; Yamabe, K.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.<>
Keywords :
insulated gate field effect transistors; nitridation; reliability; silicon compounds; 3 to 4 nm; LPCVD; MNOSFET; RTA; RTN; RTP; Si/sub 3/N/sub 4/-SiO/sub 2/ gate dielectric; densification; film quality improvements; hot-carrier reliability; hot-carrier-immunity; interface state generation; nitride oxide gate MISFETs; rapid thermal annealing; rapid thermal nitridation; rapid thermal processing; threshold voltage shift; Chemical vapor deposition; Hot carriers; Interface states; MISFETs; Temperature; Testing; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237185
