Stacked-nitride oxide gate MISFET with high hot-carrier-immunity

Author

Iwai, H. ; Momose, H.S. ; Morimoto, T. ; Ozawa, Y. ; Yamabe, K.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

235

Lastpage

238

Abstract

The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.<>

Keywords

insulated gate field effect transistors; nitridation; reliability; silicon compounds; 3 to 4 nm; LPCVD; MNOSFET; RTA; RTN; RTP; Si/sub 3/N/sub 4/-SiO/sub 2/ gate dielectric; densification; film quality improvements; hot-carrier reliability; hot-carrier-immunity; interface state generation; nitride oxide gate MISFETs; rapid thermal annealing; rapid thermal nitridation; rapid thermal processing; threshold voltage shift; Chemical vapor deposition; Hot carriers; Interface states; MISFETs; Temperature; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237185

Filename

237185