Title :
Suppression of hot carrier effects by laterally graded emitter (LGE) structure in BiCMOS
Author :
Honda, H. ; Ishigaki, Y. ; Higashitani, K. ; Hatanaka, M. ; Nagao, S. ; Tsubouchi, N.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A novel device structure, called a laterally graded emitter LGE structure, is studied for high-reliability BiCMOS LSI. In the LGE structure, by adding a low-impurity concentration region (N/sup -/ region) near the surface to the N/sup +/ emitter, the peak electric field between emitter and base in reduced and hot carrier effects due to the reverse bias of the emitter-base junction are suppressed. The optimized N/sup -/ emitter maintains the high performance of a bipolar transistor and improves the tolerance against the reverse bias stress.<>
Keywords :
BIMOS integrated circuits; bipolar transistors; hot carriers; reliability; BiCMOS; LGE; bipolar transistor; device structure; emitter-base junction; high-reliability; hot carrier effects suppression; laterally graded emitter structure; low-impurity concentration region; peak electric field reduction; tolerance against reverse bias stress; BiCMOS integrated circuits; Bipolar transistors; Hot carrier effects; Large scale integration; Stress;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237187
