Accurate characterization of gate-N/sup -/ overlapped LDD with the new L/sub eff/ extraction method

Author

Ida, Jiro ; Ishii, Satoshi ; Ichikawa, Fumio

Author_Institution

OKI Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

219

Lastpage

222

Abstract

Accurate characterization of the gate-N/sup -/ overlapped LDD (lightly doped drain) is carried out, based on the newly extracted L/sub eff/ which corresponds to the metallurgical channel length. Current drive improvement of the overlapped LDD over the conventional LDD is not so large as expected when the comparison is based on the same metallurgical channel length. Gate-source/drain overlap capacitance calculated from the newly extracted overlap length is useful for accurate analysis of propagation delay. It is shown that the current drive improvement of the overlapped LDD does not overcome the increase of the overlap capacitance and that the propagation delay of the inverter with overlapped LDD is larger than that of the conventional LDD, when these two LDDs are optimized for hot carrier reliability.<>

Keywords

insulated gate field effect transistors; semiconductor device models; LDD MOSFETs; channel length extraction; characterization; current drive improvement; gate-N/sup -/ overlapped LDD; hot carrier reliability; lightly doped drain; metallurgical channel length; overlap capacitance; overlap length; Capacitance; Hot carriers; Inverters; Propagation delay;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237189

Filename

237189