Title :
Simulation of the strain effect in the p-Ge1-xSix of kinetic factors
Author :
Dragunov, Valery P. ; Shishkov, Andrey A.
Author_Institution :
Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia
Abstract :
The strain effect should be taken into consideration for calculation of the kinetic factors and evaluation of characteristics of the Ge1-xSix pressure sensors. For the calculation of the piezoresistance it is necessary to take into consideration the spin-orbital zone and to use the three-region model of spectrum. In this paper the temperature dependencies of the drift mobility, the piezoresistance factors, the relative resistivity as functions of strain are calculated for the case of x=0 (Ge) under the various concentrations of impurity
Keywords :
Ge-Si alloys; carrier mobility; electrical resistivity; piezoresistance; semiconductor materials; spin-orbit interactions; GeSi; drift mobility; electrical resistivity; kinetic factors; numerical simulation; p-Ge1-xSix; piezoresistance; pressure sensor; spin-orbital zone; strain effect; temperature dependence; three-region model; Atom optics; Capacitive sensors; Conductivity; Equations; Impurities; Kinetic theory; Lattices; Particle beam optics; Phonons; Piezoresistance;
Conference_Titel :
Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0347-0
DOI :
10.1109/SREDM.2001.939133
