Title :
Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
Author :
Engel, Th. ; Strittmatter, A. ; Passenberg, W. ; Seeger, A. ; Steingrüber, R. ; Mekonnen, G.G. ; Unterbörsch, G. ; Bimberg, D.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
We report on our recent results on the monolithic integration of InP-based narrow band photoreceiver OEICs for 1.55 μm working in the 60 GHz range. These OEICs were achieved by successive improvement of the design and fabrication techniques used for OEICs working in the 38 GHz regime. The OEICs combine two types of high-speed devices, a top-illuminated InGaAs-InP metal-semiconductor-metal photodetector (MSM PD) with 0.2 μm feature and 0.15 μm high-electron-mobility-transistors (HEMT) based on InGaAs-InAlAs-InP
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; microwave photonics; optical design techniques; optical fabrication; optical receivers; photodetectors; 0.2 mum; 1.55 mum; GHz range; HEMT; InGaAs-InAlAs-InP; InGaAs-InP; InP; high-electron-mobility-transistors; high-speed devices; narrow band photoreceiver OEICs; optical design; optical fabrication; top-illuminated InGaAs-InP metal-semiconductor-metal photodetector; Coplanar waveguides; Fabrication; Frequency measurement; HEMTs; Indium phosphide; MIM capacitors; Narrowband; Optical amplifiers; Optoelectronic devices; Photodetectors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737740
