DocumentCode
331863
Title
A high speed Si photodiode grown by epitaxial lateral growth
Author
Schaub, J.D. ; Li, R. ; Schow, C.L. ; Campbell, J.C. ; Neudeck, Gerold W. ; Denton, Jack
Author_Institution
Texas Univ., Austin, TX, USA
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
83
Abstract
Summary form only given. We report on a resonant cavity enhanced (RCE) Si photodiode grown by epitaxial lateral overgrowth that has achieved a bandwidth of 27 GHz and a peak efficiency of 54%. This is the highest speed reported for a Si PIN photodiode and the highest bandwidth-efficiency product for any Si-based photodetector
Keywords
optical resonators; p-i-n photodiodes; photodetectors; silicon; 27 GHz; 54 percent; Si; Si photodiode; Si-based photodetector; epitaxial lateral growth; epitaxial lateral overgrowth; high speed Si photodiode; highest bandwidth-efficiency product; highest speed; peak efficiency; resonant cavity enhanced; Absorption; Bandwidth; Biomembranes; Epitaxial growth; Fingers; Implants; Lifting equipment; Mirrors; PIN photodiodes; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737744
Filename
737744
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