Field emission from submicron emitter arrays

Author

Sokolich, M. ; Adler, E.A. ; Longo, R.T. ; Goebel, D.M. ; Benton, R.T.

Author_Institution

Hughes Arrcraft Co., Torrance, CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

159

Lastpage

162

Abstract

The authors describe the preparation and emission characteristics of emitter tips with fourfold symmetry based on the mold techniques of H.F. Gray and R.F. Greene. By appropriate selection of film thicknesses, grid to emitter spacing of less than 0.5 mu m was achieved. The authors have prepared and studied the emission characteristics of several geometries that include emitter tips above and below the plane of the grid with grid to emitter spacings ranging from 0.4 to 1.0 mu m. Onset of emission was observed at grid potentials as low as 10 V with Fowler-Nordheim-like emission characteristics. Emission current vs voltage measurements over the temperature range 300 K to 450 K showed no detectable change in characteristics as expected in field emission. Stable current densities of 0.5 A/cm/sup 2/ (500 nA/tip) have been obtained and illumination of a phosphor anode has been demonstrated.<>

Keywords

cathodes; electron field emission; semiconductor technology; vacuum microelectronics; 0.4 to 1 micron; 10 V; 300 to 450 K; FETRODE; Fowler-Nordheim plots; Si; emission characteristics; emitter tips; film thicknesses; fourfold symmetry; grid potentials; grid to emitter spacing; mold techniques; phosphor anode illumination; preparation; stable current density; submicron emitter arrays; Anodes; Current density; Field emitter arrays; Geometry; Lighting; Phosphors; Temperature distribution; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237203

Filename

237203