Novel silicon avalanche diode as a direct modulated cathode with integrated planar electron-optics

Author

Hoeberechts, A.M.E.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

155

Lastpage

157

Abstract

Design constraints, process technology, and electrical and related stability results are discussed for silicon avalanche-diodes with integrated electron-optic elements. It is demonstrated that such diodes can operate in vacuum tubes. The vacuum current is obtained by applying a voltage of less than 12 V. Modulation by video-frequencies is possible above the avalanche breakdown voltage of about 5 V. Introducing planar lenses gives new options for traditional gun designs. Long lifetimes and stable operation can be obtained when chips are mounted with ´IC-discipline´ in a tube and, in operation, are not subjected to ion bombardment.<>

Keywords

avalanche diodes; cathodes; electron guns; electron optics; elemental semiconductors; modulation; silicon; stability; vacuum tubes; 12 V; 5 V; Si; avalanche breakdown voltage; avalanche diode; direct modulated cathode; gun designs; integrated planar electron-optics; planar lenses; stability; stable operation; vacuum tubes; video frequency modulation; Avalanche breakdown; Breakdown voltage; Cathodes; Diodes; Electron tubes; Lenses; Process design; Silicon; Stability; Vacuum breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237204

Filename

237204