A high sensitivity, high bandwidth In/sub 0.53/Ga/sub 0.47/As/InP heterojunction phototransistor

Author

Leu, L.Y. ; Gardner, J.T. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng. & Mater. Sci., Univ. of Southern California, Los Angeles, CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

149

Lastpage

152

Abstract

The effects of inserting a thin, low-doped InP layer into the emitter of an N-InP/p/sup +/-In/sub 0.53/Ga/sub 0.47/ As/n-In/sub 0.53/Ga/sub 0.47/As heterojunction phototransistor were investigated by both numerical simulation and experiments. This high-low emitter structure can improve both sensitivity and bandwidth over conventional structures at low input optical power by decreasing the bulk recombination current at the heterointerface. Experimental results show that the photocurrent gain is independent of the incident power at high input powers. At low input power, the gain is found to have a small power dependence, with an ideality factor of 1.25. A current gain as high as 260 is obtained at an input power of only 40 nW.<>

Keywords

III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; phototransistors; semiconductor device models; 40 nW; InP-In/sub 0.53/Ga/sub 0.47/As; bandwidth; bulk recombination current; heterointerface; heterojunction phototransistor; high bandwidth; high sensitivity; high-low emitter structure; low-doped InP layer; numerical simulation; photocurrent gain; sensitivity; Bandwidth; Heterojunctions; Indium phosphide; Numerical simulation; Optical sensors; Photoconductivity; Phototransistors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237205

Filename

237205