Title :
Low threshold and low internal loss 1.55- mu m strained-layer single quantum well lasers
Author :
Zah, C.E. ; Bhat, R. ; Cheung, K.W. ; Andreadakis, N.C. ; Menocal, S.G. ; Wu, T.C. ; Favire, F.J. ; Xoza, M. ; Hwang, D.M. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Low-threshold lasers are important for minimizing the power consumption and the crosstalk of parallel optical interconnects in switching and supercomputer applications. Low-threshold (319 A/cm/sup 2/) strained-layer single quantum well lasers with low internal loss (>
Keywords :
laser transitions; losses; semiconductor junction lasers; 1.55 micron; SQW; crosstalk; fabrication; low internal loss; low threshold lasers; parallel optical interconnects; power consumption; semiconductor lasers; single quantum well lasers; strained-layer; supercomputer applications; switching applications; Crosstalk; Energy consumption; Optical device fabrication; Optical interconnections; Optical losses; Power lasers; Quantum well lasers; Supercomputers;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237210
