A novel sublithographic tunnel diode based 5V-only flash memory

Author

Gill, M. ; Cleavelin, R. ; Lin, S. ; Middendorf, M. ; Nuyen, A. ; Wong, J. ; Huber, B. ; D´Arrigo, S. ; Shah, P. ; Kougianos, E. ; Hefley, P. ; Santin, G. ; Naso, G.

Author_Institution

Texas Instrum. Inc., Houston, TX, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

119

Lastpage

122

Abstract

A novel tunnel diode has been developed for high-density 5-V-only flash memories. The memory tunnel diode is remote from the channel, self-aligned, sublithographic, and scalable. This remote tunnel diode provides several advantages over a conventional tunnel diode: higher junction breakdown voltage, reduced substrate current during erase, reduced tunnel oxide area, reduced cell area, and competitive cell endurance. A 256-kb 5-V-only flash memory incorporating this tunnel diode is shown to have excellent operation and reliability characteristics.<>

Keywords

circuit reliability; integrated memory circuits; tunnel diodes; tunnelling; 256 kbit; 5 V; Fowler-Nordheim tunnelling; cell area reduction; cell endurance; flash memory; junction breakdown voltage; reliability characteristics; remote tunnel diode; scalable diode; self-aligned diode; sublithographic tunnel diode; substrate current reduction; tunnel oxide area; Diodes; Flash memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237212

Filename

237212