Title :
A novel sublithographic tunnel diode based 5V-only flash memory
Author :
Gill, M. ; Cleavelin, R. ; Lin, S. ; Middendorf, M. ; Nuyen, A. ; Wong, J. ; Huber, B. ; D´Arrigo, S. ; Shah, P. ; Kougianos, E. ; Hefley, P. ; Santin, G. ; Naso, G.
Author_Institution :
Texas Instrum. Inc., Houston, TX, USA
Abstract :
A novel tunnel diode has been developed for high-density 5-V-only flash memories. The memory tunnel diode is remote from the channel, self-aligned, sublithographic, and scalable. This remote tunnel diode provides several advantages over a conventional tunnel diode: higher junction breakdown voltage, reduced substrate current during erase, reduced tunnel oxide area, reduced cell area, and competitive cell endurance. A 256-kb 5-V-only flash memory incorporating this tunnel diode is shown to have excellent operation and reliability characteristics.<>
Keywords :
circuit reliability; integrated memory circuits; tunnel diodes; tunnelling; 256 kbit; 5 V; Fowler-Nordheim tunnelling; cell area reduction; cell endurance; flash memory; junction breakdown voltage; reliability characteristics; remote tunnel diode; scalable diode; self-aligned diode; sublithographic tunnel diode; substrate current reduction; tunnel oxide area; Diodes; Flash memory;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237212
