DocumentCode
331884
Title
Poly-Si thin film transistors fabricated on plastic substrates
Author
Carey, P.G. ; Smith, P.M. ; Theiss, S.D. ; Wickboldt, P. ; Sigmon, T.W. ; Tung, Y.J. ; King, T.-J.
Author_Institution
Lawrence Livermore Nat. Lab., CA, USA
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
126
Abstract
Summary form only given. We report the thin film transistor (TFT) fabrication and laser-doping processes for different low-temperature gate dielectrics and doping techniques. Electrical properties of both TFT and test/calibration devices are presented
Keywords
calibration; flat panel displays; optical fabrication; optical testing; silicon; substrates; thin film transistors; Si; calibration devices; doping techniques; electrical properties; laser-doping processes; low-temperature gate dielectrics; plastic substrates; poly-Si thin film transistors fabrication; test devices; Crystallization; Doping; Flat panel displays; Plasma temperature; Plastics; Positron emission tomography; Pulsed laser deposition; Silicon; Substrates; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737765
Filename
737765
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