Title :
Femtosecond X-ray spectroscopy at the advanced light source
Author :
Chin, A.H. ; Schoenlein, R.W. ; Glover, T.E. ; Heimann, P. ; Leemans, W.P. ; Shank, C.V. ; Zolotorev, S. ; Zholents, A.A.
Author_Institution :
Ernest Orlando Lawrence Berkeley Nat. Lab., CA, USA
Abstract :
The advent of femtosecond lasers has permitted the study of ultrafast dynamics in condensed matter, mainly by observing changes in optical properties. To study ultrafast structural dynamics in InSb under high-intensity laser excitation, we performed femtosecond time-resolved X-ray diffraction using femtosecond X-ray pulses generated via right-angle Thomson scattering
Keywords :
III-V semiconductors; X-ray diffraction; high-speed optical techniques; indium compounds; laser beam effects; 100 fs; 80 mJ; InSb; advanced light source; condensed matter; femtosecond X-ray pulse generation; femtosecond X-ray spectroscopy; femtosecond time-resolved X-ray diffraction; high-intensity laser excitation; optical properties; right-angle Thomson scattering; ultrafast dynamics; ultrafast structural dynamics; Laser excitation; Laser transitions; Light sources; Optical diffraction; Optical pulse generation; Optical scattering; Spectroscopy; Ultrafast optics; X-ray diffraction; X-ray lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737769
