Low-threshold lasing at 1.3 μm from GaAsSb quantum wells directly grown on GaAs substrates

Author

Yamada, Mitsuki ; Anan, Takayoshi ; Tokutome, Keiichi ; Nishi, Kenichi ; Gomyo, Akiko ; Sugou, Shigeo

Author_Institution

Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

149

Abstract

Material systems on GaAs that can emit at 1.3 μm have been attracting great interest from the viewpoint of realizing long-wavelength vertical-cavity surface-emitting lasers (VCSELs) that use high-reflectivity GaAs-AlAs distributed Bragg reflectors (DBRs). We previously investigated GaAsSb quantum-well (QW) layers on GaAs. By improving the GaAsSb optical quality and optimizing the laser structure, we have since achieved low-threshold lasing at a longer wavelength of 1.27 μm in the GaAsSb-GaAs material system

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; infrared sources; laser transitions; optimisation; quantum well lasers; reflectivity; surface emitting lasers; 1.27 mum; 1.3 mum; GaAs; GaAs substrates; GaAs-AlAs; GaAsSb; GaAsSb optical quality; GaAsSb quantum wells; GaAsSb-GaAs QW lasers; GaAsSb-GaAs material system; VCSELs; high-reflectivity GaAs-AlAs distributed Bragg reflectors; laser structure optimisation; long-wavelength vertical-cavity surface-emitting lasers; low-threshold lasing; Chemical lasers; Gallium arsenide; Laboratories; National electric code; Optical materials; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737775

Filename

737775