Differential capacitance technique for characterization of hot carrier induced degradation in p-channel MOSFETs

Author

Kugelmass, S.M. ; Shacham-Diamand, Y. ; Krusius, J.P.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

77

Lastpage

80

Abstract

A novel technique for the characterization of hot-electron-induced degradation in p-channel MOS devices is described. By measuring the gate to source/drain capacitance both before and after constant bias stressing, a capacitance difference curve can be generated from which the amount of electrically active sites is extracted. Detrapping of trapped charge has been observed and is shown to be sensitive to measurement conditions. Two-dimensional device simulations have been performed to analyze and confirm these experimental results.<>

Keywords

capacitance measurement; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; 2D device simulations; capacitance difference curve; constant bias stressing; detrapping; electrically active sites; gate-source/drain capacitance; hot carrier induced degradation; p-channel MOSFETs; Analytical models; Capacitance measurement; Charge measurement; Current measurement; Degradation; Electric variables measurement; MOS devices; Performance analysis; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237222

Filename

237222