Title :
Extended (1.1-2.9 eV) hot-carrier induced photon emission in n-channel MOSFETs
Author :
Lanzoni, M. ; Sangiorgi, E. ; Fiegna, C. ; Manfredi, M. ; Ricco, B.
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
Abstract :
Presents an extended set of experimental data obtained by analyzing the spectrum of the light emitted by n-MOSFETs operating at different values of bias and temperature. The analysis was performed in a wide energy range (1.1-2.9 eV) at different device bias and temperature values, obtaining significant information for the interpretation of photon emission mechanisms. The results suggest that the low and high energy parts of the photon distribution may be dominated by different emission mechanisms: electron-hole recombination and bremsstrahlung of hot electrons, respectively. This interpretation is confirmed by a comparison between the measured photon energy distribution and the calculated electron energy distribution in the device obtained by Monte Carlo simulations.<>
Keywords :
Monte Carlo methods; bremsstrahlung; electron-hole recombination; hot carriers; insulated gate field effect transistors; semiconductor device models; 1.1 to 2.9 eV; Monte Carlo simulations; bias; bremsstrahlung; electron-hole recombination; emission mechanisms; hot electrons; hot-carrier induced photon emission; n-channel MOSFETs; temperature; Data analysis; Electron emission; Energy measurement; Hot carriers; Information analysis; MOSFET circuits; Performance analysis; Spontaneous emission; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237224
