Extended (1.1-2.9 eV) hot-carrier induced photon emission in n-channel MOSFETs

Author

Lanzoni, M. ; Sangiorgi, E. ; Fiegna, C. ; Manfredi, M. ; Ricco, B.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

69

Lastpage

72

Abstract

Presents an extended set of experimental data obtained by analyzing the spectrum of the light emitted by n-MOSFETs operating at different values of bias and temperature. The analysis was performed in a wide energy range (1.1-2.9 eV) at different device bias and temperature values, obtaining significant information for the interpretation of photon emission mechanisms. The results suggest that the low and high energy parts of the photon distribution may be dominated by different emission mechanisms: electron-hole recombination and bremsstrahlung of hot electrons, respectively. This interpretation is confirmed by a comparison between the measured photon energy distribution and the calculated electron energy distribution in the device obtained by Monte Carlo simulations.<>

Keywords

Monte Carlo methods; bremsstrahlung; electron-hole recombination; hot carriers; insulated gate field effect transistors; semiconductor device models; 1.1 to 2.9 eV; Monte Carlo simulations; bias; bremsstrahlung; electron-hole recombination; emission mechanisms; hot electrons; hot-carrier induced photon emission; n-channel MOSFETs; temperature; Data analysis; Electron emission; Energy measurement; Hot carriers; Information analysis; MOSFET circuits; Performance analysis; Spontaneous emission; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237224

Filename

237224