Title :
Advanced mm-wave ICs and applications
Author :
Schlechtweg, M. ; Tessmann, A. ; Leuther, A. ; Schworer, C. ; Massler, H. ; Mikulla, M. ; Walther, M. ; Riessle, M.
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiberg, Germany
fDate :
30 Nov.-2 Dec. 2005
Abstract :
High performance integrated circuits and modules for millimeter-wave applications based on metamorphic InAlAs/InGaAs HEMTs on 4" GaAs substrates are presented. An extrinsic transit frequency of 410 GHz for 50 nm gate length devices is achieved. The IC process features high yield on both transistor and circuit levels. Two-stage low-noise amplifiers demonstrate a small signal gain of 20 dB and a noise figure of 2.4 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 21 dB at 220 GHz. High-gain modules featuring low-noise performance are discussed which enable novel applications, such as millimeter-wave imaging up to 220 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; circuit noise; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave integrated circuits; 2.4 dB; 20 dB; 21 dB; 410 GHz; 94 GHz; G-band operation; IC process; InAlAs; InGaAs; MMIC amplifier; extrinsic transit frequency; high performance integrated circuits; metamorphic HEMT; millimeter-wave applications; millimeter-wave imaging; two-stage low-noise amplifiers; Application specific integrated circuits; Gain; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Millimeter wave integrated circuits; Millimeter wave transistors; Submillimeter wave integrated circuits; FET amplifiers; FETs; low-noise amplifiers;
Conference_Titel :
Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9372-4
DOI :
10.1109/RFIT.2005.1598870
