A scalable submicron contact technology using conformal LPCVD TiN

Author

Travis, E.O. ; Paulson, W.M. ; Pintchovski, F. ; Boeck, B. ; Parrillo, L.C. ; Kottke, M.L. ; Fu, K.-Y. ; Rice, M.J. ; Price, J.B. ; Eichman, E.C.

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

47

Lastpage

50

Abstract

A scalable submicron contact technology has been developed using a fully conformal LPCVD (low-pressure chemical vapor deposition) titanium nitride barrier metal that provides low contact resistance to salicide, low leakage, excellent adhesion, and high thermal stability. Owing to the uniform step coverage, especially in deep, straight wall contacts, the CVD TiN overcomes the metal reliability and junction leakage issues associated with the physical sputtering of metals in high-aspect-ratio, submicron contacts. LPCVD TiN withstands 550 degrees C thermal stress, maintaining low contact resistance and leakage, while physically deposited TiN fails at 500 degrees C. The applicability of CVD TiN barrier technology to VLSI devices has been successfully demonstrated on production circuits.<>

Keywords

CVD coatings; VLSI; contact resistance; metallisation; titanium compounds; 550 degC; VLSI devices; adhesion; conformal LPCVD; contact resistance; leakage; metal reliability; scalable submicron contact technology; straight wall contacts; thermal stability; Adhesives; Chemical technology; Chemical vapor deposition; Contact resistance; Sputtering; Thermal resistance; Thermal stability; Thermal stresses; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237229

Filename

237229