DocumentCode :
331913
Title :
An electrically steered reconfigurable channel waveguide in an active semiconductor slab
Author :
Wa, P.L. ; Kutsche, Carl ; Loehr, John P. ; Kaspi, Ron
Author_Institution :
Sch. of Opt., Univ. of Central Florida, Orlando, FL, USA
Volume :
1
fYear :
1998
fDate :
1-4 Dec 1998
Firstpage :
204
Abstract :
We report the realization of a self-focused (soliton-like) waveguide that utilizes the carrier-induced nonlinearities of an active GaAs slab structure. A quasi cw 900nm laser beam was used to write the soliton-like waveguide that was effective at guiding another unrelated laser beam at 960nm. Steering of the laser beam over a distance of 20 μm at the output face of a 1.7mm long device was achieved by injecting an electrical current through a triangular metal electrode lying above the path of the optical beam
Keywords :
III-V semiconductors; gallium arsenide; laser transitions; optical self-focusing; optical solitons; optical waveguides; semiconductor lasers; waveguide lasers; 1.7 mm; 20 mum; 900 nm; AlGaAs; GaAs; GaAs-AlGaAs waveguide lasers; active GaAs slab structure; active semiconductor slab; carrier-induced nonlinearities; electrical current; electrically steered reconfigurable channel waveguide; optical beam; quasi cw laser beam; self-focused optical soliton-like waveguide; soliton-like waveguide writing; triangular metal electrode; Diode lasers; Laser beams; Molecular beam epitaxial growth; Optical beams; Optical solitons; Optical waveguides; Semiconductor lasers; Semiconductor waveguides; Slabs; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
Type :
conf
DOI :
10.1109/LEOS.1998.737800
Filename :
737800
Link To Document :
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