CVD copper metallurgy for ULSI interconnections

Author

Arita, Y. ; Awaya, N. ; Ohno, K. ; Sato, M.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

39

Lastpage

42

Abstract

Cu selective and blanket CVD (chemical vapor deposition) and film characteristics are described for filling high-aspect-ratio via and/or contact holes for future deep submicron Cu interconnections. High-quality CVD Cu film is easily formed by using H/sub 2/ reduction of the Cu complex. Excellent planarization is obtained with via and/or contact filling by Cu selective and/or blanket CVD following by an etch-back process. Also, a high-temperature Cu fine patterning method by RIE has been developed that uses a new gas system. Double-level Cu interconnections have been obtained with the Cu selective CVD and new Cu RIE technologies.<>

Keywords

VLSI; chemical vapour deposition; copper; metallisation; sputter etching; Cu; RIE; ULSI interconnections; blanket CVD; contact filling; contact holes; deep submicron interconnections; etch-back process; film characteristics; fine patterning method; planarization; selective CVD; via holes; Chemical vapor deposition; Copper; Etching; Filling; Planarization; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237231

Filename

237231