Title :
Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate
Author :
Liu, Z.H. ; Arulkumaran, S. ; Ng, G.I. ; Cheong, W.C. ; Zeng, R. ; Bu, Jiajun ; Wang, H. ; Radhakrishnan, K. ; Tan, C.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
30 Nov.-2 Dec. 2005
Abstract :
AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-μm- and 0.3 μm-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency fT values of 7 GHz, 22 GHz and maximum oscillation frequency fmax values of 23 GHz, 40 GHz were achieved for 0.8-μm- and 0.3-μm-gate-length device, respectively. A minimum noise figure (NFmin) of 2.0 dB and an associate gain (Gass) of 10.3 dB were achieved at 10 GHz in 0.3-μm-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; low noise amplifiers; microwave field effect transistors; wide band gap semiconductors; 0.3 mum; 0.8 mum; 10 GHz; 10.3 dB; 2.0 dB; 22 GHz; 23 GHz; 40 GHz; 7 GHz; HEMT; Si; gate-length device; high-electron-mobility-transistors; high-resistivity silicon substrate; low noise amplifiers; maximum oscillation frequency; microwave noise characteristics; Aluminum gallium nitride; Costs; Cutoff frequency; Gallium nitride; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Noise measurement; Silicon; High-electron-mobility transistors; Microwave power amplifiers; microwave measurements; semiconductor device fabrication; semiconductor device noise;
Conference_Titel :
Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9372-4
DOI :
10.1109/RFIT.2005.1598891
