Title :
Local structure and bonding of luminescent Er in GaN: a contrast with Er in Si
Author :
Citrin, P.H. ; Northrup, P.A. ; Birkhahn, R. ; Steckl, A.J.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si
Keywords :
EXAFS; III-V semiconductors; bond lengths; doping profiles; electroluminescence; erbium; gallium compounds; semiconductor thin films; wide band gap semiconductors; Er-N bond length; GaN:Er; O impurities; X-ray absorption measurements; bonding; chemical concepts; electroluminescence intensities; local structure; luminescent Er; relatively high concentrations; Atomic measurements; Bonding; Electroluminescence; Electromagnetic wave absorption; Erbium; Gallium nitride; Luminescence; Optical films; Optical sensors; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939189
