DocumentCode
331943
Title
Nonlinear directional coupler loaded with Bragg reflector
Author
Nakatsuhara, K. ; Mizumoto, T. ; Takahashi, E. ; Hossain, S. ; Jeong, S.H. ; Ma, B.J. ; Nakano, Y.
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
268
Abstract
The nonlinear symmetric directional coupler with Bragg reflector was fabricated using a GaInAsP-InP wafer, in which a 300 nm thick InP upper cladding layer and a 450 nm thick GaInAsP layer was used
Keywords
Bragg gratings; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nonlinear optics; optical directional couplers; optical switches; reflectivity; 300 mm; 450 mm; Bragg reflector loaded optical couplers; GaInAsP; GaInAsP layer; GaInAsP-InP; GaInAsP-InP wafer; InP upper cladding layer; nonlinear directional coupler; nonlinear optical switching; nonlinear symmetric directional coupler; Directional couplers; Nonlinear optical devices; Nonlinear optics; Optical bistability; Optical interferometry; Optical refraction; Optical sensors; Optical variables control; Optical waveguides; Power semiconductor switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737833
Filename
737833
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