Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN

Author

Umana-Membreno, G.A. ; Spaargaren, S.M.R. ; Dell, J.M. ; Nener, B.D. ; Faraone, L. ; Parish, G. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

fYear

2000

fDate

2000

Firstpage

23

Lastpage

26

Abstract

Capacitance deep level transient spectroscopy (DLTS) has been used to characterise undoped GaN epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD) on sapphire substrates. The DLTS measurements were performed by recording full capacitance transients over the 90 to 475 K temperature range. Nonexponential emission transients were observed in the samples studied. Modelling shows that these results can be adequately described by a set of traps with a Gaussian distribution of activation energies

Keywords

III-V semiconductors; MOCVD coatings; deep level transient spectroscopy; electron traps; gallium compounds; hole traps; semiconductor epitaxial layers; wide band gap semiconductors; Al₂O₃; DLTS; GaN; Gaussian distribution; activation energies; capacitance deep level transient spectroscopy; epitaxial layers; full capacitance transients; metal-organic chemical vapour deposition; modelling; nonexponential emission transients; nonexponential thermal emission transients; sapphire substrates; traps; undoped MOCVD-grown GaN; Capacitance measurement; Chemical vapor deposition; Epitaxial layers; Gallium nitride; MOCVD; Performance evaluation; Spectroscopy; Substrates; Temperature distribution; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939190

Filename

939190