Title :
Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN
Author :
Umana-Membreno, G.A. ; Spaargaren, S.M.R. ; Dell, J.M. ; Nener, B.D. ; Faraone, L. ; Parish, G. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
Abstract :
Capacitance deep level transient spectroscopy (DLTS) has been used to characterise undoped GaN epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD) on sapphire substrates. The DLTS measurements were performed by recording full capacitance transients over the 90 to 475 K temperature range. Nonexponential emission transients were observed in the samples studied. Modelling shows that these results can be adequately described by a set of traps with a Gaussian distribution of activation energies
Keywords :
III-V semiconductors; MOCVD coatings; deep level transient spectroscopy; electron traps; gallium compounds; hole traps; semiconductor epitaxial layers; wide band gap semiconductors; Al2O3; DLTS; GaN; Gaussian distribution; activation energies; capacitance deep level transient spectroscopy; epitaxial layers; full capacitance transients; metal-organic chemical vapour deposition; modelling; nonexponential emission transients; nonexponential thermal emission transients; sapphire substrates; traps; undoped MOCVD-grown GaN; Capacitance measurement; Chemical vapor deposition; Epitaxial layers; Gallium nitride; MOCVD; Performance evaluation; Spectroscopy; Substrates; Temperature distribution; Transient analysis;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939190
