Title :
Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by MOCVD
Author :
Ahoujja, M. ; Yeo, Y.K. ; Hengehold, R.L. ; Guido, L.J. ; Mitev, P. ; Johnstone, D.K. ; Kim, Y.H.
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
The influence of arsenic doping on the electrical properties of GaN films grown on sapphire substrates by metalorganic chemical vapor deposition has been investigated using temperature dependent Hall effect and deep-level transient spectroscopy measurements. With an increase in arsine flow rate from 1.5 to 100 sccm, the carrier concentration increases from 8.6×1016 to 7.5×1017 cm -3 while the mobility ranges from 250 to 400 cm2/Vs. Two deep electron trap levels were observed at around 0.22 and 0.60 eV from the undoped GaN sample, whereas the deep level at around 0.22 eV was not observed in the As-doped samples
Keywords :
Hall effect; III-V semiconductors; MOCVD coatings; arsenic; carrier density; carrier mobility; deep level transient spectroscopy; electron traps; gallium compounds; semiconductor doping; semiconductor epitaxial layers; wide band gap semiconductors; As-doped samples; GaN epitaxial layers; GaN:As; MOCVD; arsenic doping; arsine flow rate; carrier concentration; deep electron trap levels; deep-level transient spectroscopy; electrical properties; mobility; sapphire substrates; temperature dependent Hall effect; Chemical vapor deposition; Doping; Electric variables measurement; Epitaxial layers; Gallium nitride; Impurities; MOCVD; Optical films; Spectroscopy; Temperature dependence;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939191
