Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures

Author

Godlewski, M. ; Goldys, E.M. ; Phillips, M.R. ; Ivanov, V.Yu. ; Langer, R. ; Barski, A.

Author_Institution

Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland

fYear

2000

fDate

2000

Firstpage

31

Lastpage

34

Abstract

We studied high quality quasihomoepitaxial AlGaN/GaN quantum well (QW) heterostructures with high internal electric fields which lead to significant red shifts of exciton emission in wider QWs and an unusually long decay kinetics. The strong electric fields in the structures cause a significant change in the electron penetration range. The fields can be screened under intense electron beam excitation. We propose that electric field fluctuations are the reason for the observed in-plane variation of the CL intensity

Keywords

III-V semiconductors; aluminium compounds; cathodoluminescence; excitons; gallium compounds; photoluminescence; piezoelectric semiconductors; red shift; semiconductor quantum wells; wide band gap semiconductors; AlGaN; GaN; cathodoluminescence; decay kinetics; electric field fluctuations; electron penetration range; exciton emission; heterostructures; high internal electric fields; intense electron beam excitation; photoluminescence; piezoelectric GaN/AlGaN quantum well structures; quasihomoepitaxial AlGaN/GaN quantum well; red shifts; strong electric fields; Aluminum gallium nitride; Australia; Electron beams; Excitons; Fluctuations; Gallium nitride; Information analysis; Kinetic theory; Lead compounds; Piezoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939192

Filename

939192