Title :
Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures
Author :
Godlewski, M. ; Goldys, E.M. ; Phillips, M.R. ; Ivanov, V.Yu. ; Langer, R. ; Barski, A.
Author_Institution :
Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
Abstract :
We studied high quality quasihomoepitaxial AlGaN/GaN quantum well (QW) heterostructures with high internal electric fields which lead to significant red shifts of exciton emission in wider QWs and an unusually long decay kinetics. The strong electric fields in the structures cause a significant change in the electron penetration range. The fields can be screened under intense electron beam excitation. We propose that electric field fluctuations are the reason for the observed in-plane variation of the CL intensity
Keywords :
III-V semiconductors; aluminium compounds; cathodoluminescence; excitons; gallium compounds; photoluminescence; piezoelectric semiconductors; red shift; semiconductor quantum wells; wide band gap semiconductors; AlGaN; GaN; cathodoluminescence; decay kinetics; electric field fluctuations; electron penetration range; exciton emission; heterostructures; high internal electric fields; intense electron beam excitation; photoluminescence; piezoelectric GaN/AlGaN quantum well structures; quasihomoepitaxial AlGaN/GaN quantum well; red shifts; strong electric fields; Aluminum gallium nitride; Australia; Electron beams; Excitons; Fluctuations; Gallium nitride; Information analysis; Kinetic theory; Lead compounds; Piezoelectricity;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939192
