Title :
795 nm-emitting 40 W CW high-temperature laser diode bars with Al-free active area
Author :
Bournes, P. ; Asonen, H. ; Fang, F. ; Finander, M. ; Jansen, M. ; Nabiev, R.F. ; Nappi, J. ; Rakkenus, K. ; Salokatve, A.
Author_Institution :
Semicond. Group, Coherent, Santa Clara, CA, USA
Abstract :
We report reliable 40 W CW QW laser bars emitting 795 nm with 57% wall-plug efficiency, operating at temperatures as high as 75°C. Al-free active area structures with tensile-strained single quantum wells are grown by solid source MBE
Keywords :
laser transitions; molecular beam epitaxial growth; quantum well lasers; 40 W; 57 percent; 75 C; 795 nm; Al-free active area; Al-free active area structures; CW high-temperature laser diode bars; reliable CW QW laser bars; solid source MBE; tensile-strained single quantum wells; Artificial intelligence; Bars; Diode lasers; Laser excitation; Power lasers; Pump lasers; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737837
