Title :
Deep centers in as-grown and electron-irradiated n-GaN
Author :
Fang, Z.Q. ; Polenta, L. ; Hemsky, J.W. ; Look, D.C.
Author_Institution :
Semicond. Res. Center, Wright State Univ., Dayton, OH, USA
Abstract :
Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (EI) creates VN-related centers with activation energy ET=0.06 eV and a center with ET=0.85 eV, which might be related to NI. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like “line-defects”. Based on comparisons with EI-induced centers, some deep centers in as-grown materials are identified as possible point defects
Keywords :
III-V semiconductors; deep level transient spectroscopy; defect states; dislocation density; electron beam effects; gallium compounds; point defects; wide band gap semiconductors; GaN; VN-related centers; activation energy; as-grown n-GaN; deep centers; deep level transient spectroscopy; electron-irradiated n-GaN; high dislocation densities; line-defects; point defects; sapphire; Capacitance-voltage characteristics; Gallium nitride; Gold; MOCVD; Ohmic contacts; Optical devices; Optical materials; Sandwich structures; Schottky barriers; Spectroscopy;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939193
