Ion implantation into GaN: opportunities and problems

Author

Kucheyev, S.O. ; Williams, J.S. ; Jagadish, C. ; Zou, J. ; Toth, M. ; Phillips, M.R. ; Li, G.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2000

fDate

2000

Firstpage

47

Lastpage

50

Abstract

We summarize here our recent results on structural and optical characteristics of wurtzite GaN films bombarded under a wide range of implant conditions, as studied by Rutherford backscattering/channeling (RBS/C) spectrometry, transmission electron microscopy (TEM), atomic force microscopy (AFM), and cathodoluminescence (CL). Our results highlight current problems, associated with implantation-produced disorder, which may hinder a successful application of ion implantation in the fabrication of GaN-based devices

Keywords

III-V semiconductors; Rutherford backscattering; atomic force microscopy; cathodoluminescence; channelling; gallium compounds; ion beam effects; ion implantation; semiconductor doping; transmission electron microscopy; wide band gap semiconductors; AFM; GaN; GaN-based devices; Rutherford backscattering; TEM; atomic force microscopy; cathodoluminescence; channeling; films; implant conditions; implantation-produced disorder; ion implantation; optical characteristics; structural characteristics; transmission electron microscopy; wurtzite; Atom optics; Atomic force microscopy; Electron optics; Gallium nitride; Implants; Ion implantation; Optical films; Optical microscopy; Particle beam optics; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939195

Filename

939195