Title :
Mask-Under-Etch Experiments of Si{110} in TMAH
Author :
Pandy, A. ; Landsberge, L.M. ; Kahrizi, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Abstract :
This work investigates the etching of {110} silicon at 80°C in TMAH at 25wt% and 12wt%. A wagonwheel pattern having 1" spokes is used, and the under-etched surfaces and inclination angles are observed in detail. Under-etched surfaces are often complex, composed of 2 or 3 facets, some smooth and some rough. While underetch rate curves are similar, the inclination angles and crystal features of the exposed facets vary dramatieally between the two concentrations.
Keywords :
elemental semiconductors; etching; masks; optical microscopy; scanning electron microscopy; silicon; 180 degC; Si; TMAH; crystal features; inclination angles; mask-under-etch experiments; under-etched surfaces; underetch rate curves; wagon-wheel pattern; Anisotropic magnetoresistance; Chemicals; Crystallography; Electron optics; Optical microscopy; Rough surfaces; Scanning electron microscopy; Silicon; Surface roughness; Wet etching;
Conference_Titel :
Electrical and Computer Engineering, 1999 IEEE Canadian Conference on
Conference_Location :
Edmonton, Alberta, Canada
Print_ISBN :
0-7803-5579-2
DOI :
10.1109/CCECE.1999.804959
