Title :
A CMOS injection-locked frequency divider with FSK signal deviations for high-order division
Author :
Huang, F.-H. ; Chan, Y.-J.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fDate :
30 Nov.-2 Dec. 2005
Abstract :
In this report, an injection-locked frequency divider (ILFD) was designed and realized using the 0.13 μm CMOS technologies. It not only demonstrates a variable self-oscillation frequency from 300 MHz to 4.7 GHz adjusted by the controlled voltages, but also exhibits the divider performance with a wide locking range for division ratios of 2, 4 and 6 as the self-oscillation frequency fixed to 2.5 GHz. The transient responses in ILFD, the FSK signal deviations through the frequency down-conversion operation have been demonstrated for the high-order division ratios.
Keywords :
CMOS integrated circuits; UHF oscillators; frequency dividers; frequency shift keying; injection locked oscillators; microwave oscillators; transient response; voltage-controlled oscillators; 300 MHz to 4.7 GHz; CMOS injection-locked frequency divider; FSK signal deviations; frequency down-conversion operation; high-order division; high-order division ratios; transient responses; variable self-oscillation frequency; CMOS technology; Circuits; Energy consumption; Frequency conversion; Frequency shift keying; Latches; Phase locked loops; Phase noise; Voltage control; Wireless LAN; CMOS; FSK signal modulation; Injection-locked frequency divider; high-order division ratio;
Conference_Titel :
Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9372-4
DOI :
10.1109/RFIT.2005.1598900
