Title :
Improvements in the dielectric properties of aluminium nitride through passivation
Author :
Butcher, K.S.A. ; Tansley, T.L.
Author_Institution :
Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
Poly-crystalline and amorphous AlN is susceptible to oxidation via the large surface area presented by intergranular voids and vacancies. Here we present measurements of the electrical properties of metal-insulator-metal AlN based structures that show marked improvement in dielectric breakdown and I-V characteristics following the application of various passivation strategies that prevent surface oxidation. Breakdown fields of >100 MV/m have been achieved and up to four orders of magnitude reduction in current density. Frequency dependent dielectric constant and dielectric loss measurements are also presented
Keywords :
MIM structures; aluminium compounds; current density; dielectric losses; dielectric thin films; electric breakdown; oxidation; passivation; permittivity; vacancies (crystal); voids (solid); AlN; I-V characteristics; aluminium nitride; amorphous AlN; breakdown fields; current density; dielectric breakdown; dielectric loss; dielectric properties; electrical properties; frequency dependent dielectric constant; intergranular voids; large surface area; metal-insulator-metal AlN based structures; oxidation; passivation; polycrystalline AlN; surface oxidation; vacancies; Aluminum; Amorphous materials; Dielectric breakdown; Dielectric constant; Dielectric loss measurement; Dielectric measurements; Electric variables measurement; Metal-insulator structures; Oxidation; Passivation;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939198
