• DocumentCode
    331955
  • Title

    Growth and properties of self-organized In0.4Ga0.6 As-GaAs quantum dot light emitting diodes on silicon substrates

  • Author

    Linder, K.K. ; Phillips, J. ; Krishna, S. ; Qasaimeh, O. ; Bhattacharya, P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    1
  • fYear
    1998
  • fDate
    1-4 Dec 1998
  • Firstpage
    293
  • Abstract
    Summary form only given. Edge-emitting guided-wave LEDs, of dimensions 50 μm X (200-800) μm, were made by standard photolithography techniques. Both room (300K) and low temperature (l7K) light current (L-I) measurements have been obtained. Maximum output powers are -0.2 mW
  • Keywords
    III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; light emitting diodes; optical fabrication; photolithography; self-adjusting systems; semiconductor growth; semiconductor quantum dots; 0.2 mW; 17 K; 200 mum; 300 K; 50 mum; 800 mum; In0.4Ga0.6As-GaAs; edge-emitting guided-wave LED growth; light current measurements; low temperature; room temperature; self-organized In0.4Ga0.6As-GaAs quantum dot light emitting diodes; silicon substrates; standard photolithography techniques; Electrons; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Quantum dots; Temperature measurement; US Department of Transportation; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.737846
  • Filename
    737846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=331955