Characterization of defects in LT-GaAs using a novel method based on thin LT-layers incorporated into pin diodes

Author

Kiesel, P. ; Tautz, S. ; Pfeiffer, K.-F. ; Krämer, S. ; Steen, C. ; Malzer, Stefan ; Dohler, G.H.

Author_Institution

Inst. for Tech. Phys. I, Friedrich-Alexander-Univ. Erlangen-Nurnberg, Germany

fYear

2000

fDate

2000

Firstpage

65

Lastpage

72

Abstract

A thin layer of low temperature grown GaAs (LT-GaAs) incorporated in the intrinsic layer of a pin diode was used, to investigate the deep electronic defect centers in LT-GaAs, DC and AC n-channel conductance measurements and electro-absorption experiments as a function of reverse bias provide important information about the density, the energy distribution and the charging and discharging kinetics of the deep centers in the energy gap

Keywords

III-V semiconductors; deep levels; defect states; electroabsorption; gallium arsenide; interface states; p-i-n diodes; semiconductor device measurement; AC n-channel conductance; DC n-channel conductance; GaAs; LT-GaAs; charging kinetics; deep centers; deep electronic defect centers; defects; discharging kinetics; electro-absorption; energy distribution; energy gap; intrinsic layer; low temperature grown GaAs; pin diodes; reverse bias; thin LT-layers; thin layer; Annealing; Density measurement; Energy measurement; Gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Physics; Space charge; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939199

Filename

939199