Title :
Characterization of defects in LT-GaAs using a novel method based on thin LT-layers incorporated into pin diodes
Author :
Kiesel, P. ; Tautz, S. ; Pfeiffer, K.-F. ; Krämer, S. ; Steen, C. ; Malzer, Stefan ; Dohler, G.H.
Author_Institution :
Inst. for Tech. Phys. I, Friedrich-Alexander-Univ. Erlangen-Nurnberg, Germany
Abstract :
A thin layer of low temperature grown GaAs (LT-GaAs) incorporated in the intrinsic layer of a pin diode was used, to investigate the deep electronic defect centers in LT-GaAs, DC and AC n-channel conductance measurements and electro-absorption experiments as a function of reverse bias provide important information about the density, the energy distribution and the charging and discharging kinetics of the deep centers in the energy gap
Keywords :
III-V semiconductors; deep levels; defect states; electroabsorption; gallium arsenide; interface states; p-i-n diodes; semiconductor device measurement; AC n-channel conductance; DC n-channel conductance; GaAs; LT-GaAs; charging kinetics; deep centers; deep electronic defect centers; defects; discharging kinetics; electro-absorption; energy distribution; energy gap; intrinsic layer; low temperature grown GaAs; pin diodes; reverse bias; thin LT-layers; thin layer; Annealing; Density measurement; Energy measurement; Gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Physics; Space charge; Substrates; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939199
