• DocumentCode
    3319565
  • Title

    A stabilized transistor oscillator

  • Author

    Keonjian, E.

  • Author_Institution
    General Electric Co., Syracuse, NY, USA
  • Volume
    0
  • fYear
    1955
  • fDate
    17-18 Feb. 1955
  • Firstpage
    5
  • Lastpage
    5
  • Abstract
    Summary form only given. The most serious causes of frequency instability are the effect of temperature on parameters of transistors and the variation of supply voltage. There are some circuit arrangements which can considerably minimize these effects. A stability in the order of 20 parts per million for ±10 percent changes in supply voltage has been obtained for a variable-frequency oscillator at a frequency of 1 megacycle. By using a 100-kc crystal, a frequency stability better than ONE PART PER MILLION PER 1 VOLT SUPPLY VOLTAGE OR PER DEGREE CENTIGRADE RESPECTIVELY can be obtained over a wide range of supply voltage and temperatures. Output voltage of this oscillator is in the order of 3 volts rms, for a supply voltage of 12 volts and current drain of 2 ma. The maximum frequency change is 2 cps for a variation of load resistance from 100,OOO ohms to 1 ohm. PER TEN MILLION PER DEGREE CENTIGRADE can he At frequency 1 mc. a frequency stability better than ONE PART obtained.
  • Keywords
    Circuit stability; Electron tubes; Frequency; Temperature distribution; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1955 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1955.1188784
  • Filename
    1188784