DocumentCode :
3319565
Title :
A stabilized transistor oscillator
Author :
Keonjian, E.
Author_Institution :
General Electric Co., Syracuse, NY, USA
Volume :
0
fYear :
1955
fDate :
17-18 Feb. 1955
Firstpage :
5
Lastpage :
5
Abstract :
Summary form only given. The most serious causes of frequency instability are the effect of temperature on parameters of transistors and the variation of supply voltage. There are some circuit arrangements which can considerably minimize these effects. A stability in the order of 20 parts per million for ±10 percent changes in supply voltage has been obtained for a variable-frequency oscillator at a frequency of 1 megacycle. By using a 100-kc crystal, a frequency stability better than ONE PART PER MILLION PER 1 VOLT SUPPLY VOLTAGE OR PER DEGREE CENTIGRADE RESPECTIVELY can be obtained over a wide range of supply voltage and temperatures. Output voltage of this oscillator is in the order of 3 volts rms, for a supply voltage of 12 volts and current drain of 2 ma. The maximum frequency change is 2 cps for a variation of load resistance from 100,OOO ohms to 1 ohm. PER TEN MILLION PER DEGREE CENTIGRADE can he At frequency 1 mc. a frequency stability better than ONE PART obtained.
Keywords :
Circuit stability; Electron tubes; Frequency; Temperature distribution; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1955 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1955.1188784
Filename :
1188784
Link To Document :
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