Title :
Control of non-stoichiometry of low-temperature-grown III-V semiconductors using in situ reflectance difference spectroscopy
Author :
Herfort, J. ; Apostolopoulos, G. ; Ulrici, W. ; Däweritz, L. ; Ploog, K.H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
We present results of in situ reflectance difference (RD) spectroscopy investigations of AlxGa1-xAs grown by molecular beam epitaxy at low temperatures. The linear electro-optic resonances appearing in the RD spectra are utilized to in situ control the nonstoichiometry of LT-AlxGa1-xAs. The results are compared to those obtained for LT-GaAs
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; molecular beam epitaxial growth; reflectivity; semiconductor epitaxial layers; semiconductor growth; stoichiometry; AlxGa1-xAs; AlGaAs; LT-AlxGa1-xAs; LT-GaAs; in situ reflectance difference spectroscopy; linear electro-optic resonance; low temperature; low-temperature-grown III-V semiconductors; molecular beam epitaxy; nonstoichiometry; Geometrical optics; III-V semiconductor materials; Low earth orbit satellites; Molecular beam epitaxial growth; Optical buffering; Reflectivity; Resonance; Spectroscopy; Substrates; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939201
