Control of non-stoichiometry of low-temperature-grown III-V semiconductors using in situ reflectance difference spectroscopy

Author

Herfort, J. ; Apostolopoulos, G. ; Ulrici, W. ; Däweritz, L. ; Ploog, K.H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

2000

fDate

2000

Firstpage

77

Lastpage

80

Abstract

We present results of in situ reflectance difference (RD) spectroscopy investigations of Al_xGa_1-xAs grown by molecular beam epitaxy at low temperatures. The linear electro-optic resonances appearing in the RD spectra are utilized to in situ control the nonstoichiometry of LT-Al_xGa_1-xAs. The results are compared to those obtained for LT-GaAs

Keywords

III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; molecular beam epitaxial growth; reflectivity; semiconductor epitaxial layers; semiconductor growth; stoichiometry; Al_xGa_1-xAs; AlGaAs; LT-Al_xGa_1-xAs; LT-GaAs; in situ reflectance difference spectroscopy; linear electro-optic resonance; low temperature; low-temperature-grown III-V semiconductors; molecular beam epitaxy; nonstoichiometry; Geometrical optics; III-V semiconductor materials; Low earth orbit satellites; Molecular beam epitaxial growth; Optical buffering; Reflectivity; Resonance; Spectroscopy; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939201

Filename

939201