Influence of Be doping on the structural properties of low-temperature grown GaAs

Author

Luysberg, M. ; Specht, P. ; Weber, E.R.

Author_Institution

Inst. fur Festkorperforschung, Forschungszentrum Julich GmbH, Germany

fYear

2000

fDate

2000

Firstpage

81

Lastpage

84

Abstract

The influence of Be doping on the limitations to perfect epitaxial growth of LT-GaAs is investigated by transmission electron microscopy. Be doped GaAs films with doping levels up to 1.5 10²¹ cm^-3 were grown by molecular beam epitaxy at 190°C to 250°C. In general the Be doped films seem to grow with high perfection. The roughening of the growth front is not as pronounced as in undoped material, resulting in a larger defect-free layer thickness. Even very high Be doping levels of 8 10²⁰ cm^-3 do not show any structural defects. However, if the Be doping level is increased to 1.5 10²¹ cm^-3, high densities of stacking faults and precipitates are observed, although the film maintains a perfect crystallinity

Keywords

III-V semiconductors; beryllium; gallium arsenide; heavily doped semiconductors; molecular beam epitaxial growth; precipitation; rough surfaces; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; stacking faults; transmission electron microscopy; 190 to 250 C; Be doped GaAs films; Be doping; GaAs:Be; LT-GaAs; epitaxial growth; growth front; high perfection; low-temperature grown GaAs; molecular beam epitaxy; perfect crystallinity; precipitates; roughening; stacking faults; structural defects; structural properties; transmission electron microscopy; Crystalline materials; Crystallization; Doping; Epitaxial growth; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Stacking; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939202

Filename

939202