Title :
An integrated dual-band SiGe HBT low noise amplifier
Author :
Huang, Chen-Yang ; Hsin, Yue-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fDate :
30 Nov.-2 Dec. 2005
Abstract :
A common-base cascade dual-band low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35 μm BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size is 0.86 × 0.58 mm2.
Keywords :
BiCMOS integrated circuits; germanium alloys; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; silicon alloys; 11.1 dB; 2.4 to 5.8 GHz; 4.3 dB; 5.11 dB; 5.4 dB; BiCMOS; common-base cascade dual-band LNA; dc power consumption; integrated dual-band HBT low noise amplifier; BiCMOS integrated circuits; Dual band; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Low-noise amplifiers; Silicon germanium; Transceivers; Wireless LAN; Dual-Band; HBT; LNA; Low Noise Amplifier;
Conference_Titel :
Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9372-4
DOI :
10.1109/RFIT.2005.1598907
