Characterisation of indium phosphide using terahertz radiation

Author

Causley, R.L. ; Lewis, R.A.

Author_Institution

Inst. for Supercond. & Electron. Mater., Wollongong Univ., NSW, Australia

fYear

2000

fDate

2000

Firstpage

101

Lastpage

104

Abstract

Specimens of undoped, n-type and p-type bulk InP have been investigated using THz radiation. Reflection spectroscopy permits the determination of the TO and LO phonon energies as well as the carrier concentration. Absorption spectroscopy reveals transitions between impurity states. We report the first absorption spectrum of an acceptor in InP. The transition energies agree well with electronic Raman scattering and photoluminescence data

Keywords

III-V semiconductors; carrier density; impurity absorption spectra; impurity states; indium compounds; infrared spectra; phonon spectra; reflectivity; InP; LO phonon energies; THz radiation; TO phonon energies; absorption spectroscopy; acceptor; carrier concentration; electronic Raman scattering; impurity states; indium phosphide; n-type; p-type; photoluminescence; reflection spectroscopy; terahertz radiation; transition energies; undoped bulk InP; Damping; Indium phosphide; Optical reflection; Phonons; Plasma temperature; Reflectivity; Spectroscopy; Superconducting materials; Temperature measurement; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939206

Filename

939206