Temporal response modeling of metal-semiconductor-metal photodetector

Author

Averine, S. ; Chan, Y.C. ; Ng, S.L. ; Sachot, R. ; Lam, Y.L.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2000

fDate

2000

Firstpage

109

Lastpage

112

Abstract

Charge accumulation and screening of the dark electric field at high optical excitation levels greatly modify the drift conditions of the photogenerated electrons and holes in the active region of the metal-semiconductor-metal photodiode (MSM-PD). This effect gives rise to impulse response distortion and reduced bandwidth and efficiency. Several ways of improving the high-speed response of the MSM-PD are analyzed and discussed

Keywords

metal-semiconductor-metal structures; photodetectors; photodiodes; semiconductor device models; GaAs; active region; charge accumulation; dark electric field; drift conditions; efficiency; high optical excitation levels; high-speed response; impulse response distortion; metal-semiconductor-metal photodetector; photodiode; reduced bandwidth; screening; temporal response modeling; Charge carrier processes; Electron optics; Gallium arsenide; High speed optical techniques; Lighting; Optical distortion; Optical pulses; Optical saturation; Photodetectors; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939208

Filename

939208