Title :
Temporal response modeling of metal-semiconductor-metal photodetector
Author :
Averine, S. ; Chan, Y.C. ; Ng, S.L. ; Sachot, R. ; Lam, Y.L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
Charge accumulation and screening of the dark electric field at high optical excitation levels greatly modify the drift conditions of the photogenerated electrons and holes in the active region of the metal-semiconductor-metal photodiode (MSM-PD). This effect gives rise to impulse response distortion and reduced bandwidth and efficiency. Several ways of improving the high-speed response of the MSM-PD are analyzed and discussed
Keywords :
metal-semiconductor-metal structures; photodetectors; photodiodes; semiconductor device models; GaAs; active region; charge accumulation; dark electric field; drift conditions; efficiency; high optical excitation levels; high-speed response; impulse response distortion; metal-semiconductor-metal photodetector; photodiode; reduced bandwidth; screening; temporal response modeling; Charge carrier processes; Electron optics; Gallium arsenide; High speed optical techniques; Lighting; Optical distortion; Optical pulses; Optical saturation; Photodetectors; Photodiodes;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939208
