Title :
Optoelectronic properties of nonstoichiometric heterostructures
Author :
Nolte, David D. ; Balasubramanian, S. ; Melloch, M.R.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
We review the optoelectronic properties of nonstoichiometric heterostructures, including the contribution to material absorption by arsenic precipitates in GaAs and the electroabsorption of quantum confined excitons in LTG quantum wells. These materials form the basis of adaptive holographic quantum well films used for adaptive optics applications. The optical applications rely on space-charge trapped in the deep energy levels which we calculate for spheroidal mesoscopic defects using an extension of the many-electron model of Haldane and Anderson. With electroabsorption spectroscopy we are able to establish details of vacancy migration and vacancy decay mechanisms during annealing
Keywords :
III-V semiconductors; adaptive optics; deep levels; defect absorption spectra; defect states; electroabsorption; excitons; gallium arsenide; holography; optical films; precipitation; semiconductor heterojunctions; semiconductor quantum wells; space charge; vacancies (crystal); GaAs; LTG quantum wells; adaptive holographic quantum well films; adaptive optics applications; annealing; arsenic precipitates; deep energy levels; electroabsorption; many-electron model; material absorption; nonstoichiometric heterostructures; optoelectronic properties; quantum confined excitons; review; space-charge; spheroidal mesoscopic defects; vacancy decay mechanisms; vacancy migration; Absorption; Adaptive optics; Charge carrier processes; Excitons; Gallium arsenide; Holographic optical components; Holography; Optical films; Optical materials; Potential well;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939209
