DocumentCode :
3319693
Title :
Predictions based on the maximum oscillator frequency
Author :
Drouilhet, P.
Author_Institution :
Philco Corp., Philadelphia, PA, USA
Volume :
0
fYear :
1955
fDate :
17-18 Feb. 1955
Firstpage :
7
Lastpage :
7
Abstract :
Summary form only given. The maximum frequency at which a transistor can oscillate is a figure from which much of the high-frequency performance of the transistor can be predicted. For transistors of any given type, this measurement can be made easily in a circuit in which the tunedcircuit frequency and the feedback are the only two adjustable elements. The maximum frequency is in itself a useful transistor parameter. However, in many cases it is more desirable to determine the cutoff frequency of the transistor action, the so-called alpha-cutoff frequency, or fca. Since the maximum frequeng of osallation is that frequency at which the transistor has a unilateral-power gain of unity, the gain at lower frequencies can be directly related to the ratio of operating frequency to fmax. In addition, the efEaency of oscillation, which is the ratio of rf output power to total dc input power, may also be defined in terms of this frequency ratio. It is shown that the unilateral power gain varies at 6 db per octave. It is also found that for surface-barrier transistors the efficiency of oscillation is given approximately by the formula: Efficiency = -0.8 log10 (f/fmax).
Keywords :
Frequency; Oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1955 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1955.1188793
Filename :
1188793
Link To Document :
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