Title :
Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices
Author :
Brunkov, P.N. ; Chaldyshev, V.V. ; Chernigovskii, A.V. ; Suvorova, A.A. ; Bert, N.A. ; Konnikov, S.G. ; Preobrazhenskii, V.V. ; Putyato, M.A. ; Semyagin, B.R.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers. As a result of the majority carrier accumulation, a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equation showed the concentration of accumulated charge to be as high as 1×1012 cm-2 which is comparable with the concentration of As clusters determined from transmission electron microscopy study
Keywords :
III-V semiconductors; Poisson equation; Schottky barriers; carrier density; gallium arsenide; semiconductor junctions; transmission electron microscopy; As-cluster; GaAs; GaAs buffers; Poisson equation; accumulated charge; capacitance-voltage characteristics; capacitance-voltage technique; large depletion region; low-temperature-grown GaAs layer; majority carrier accumulation; n-type matrices; numerical solution; p-type matrices; simulation; transmission electron microscopy; Capacitance-voltage characteristics; Charge carrier processes; Dielectric constant; Electric resistance; Gallium arsenide; Nanoscale devices; Physics; Schottky barriers; Temperature; Transmission electron microscopy;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939211
