Title :
Electrical and optical properties of MeV As and P ion implanted and annealed indium phosphide
Author :
Carmody, C. ; Boudinov, H. ; Tan, H.H. ; Jagadish, C. ; Lederer, M.J. ; Kolev, V. ; Luther-Davies, B.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We have studied the influence of As+ and P+ implantation on optoelectronic properties of InP. Samples were implanted at a dose of 1×1016 cm-2 and subsequently treated with rapid thermal annealing for temperatures between 400 and 700°C for 30 seconds. Hall effect measurements showed low mobility and high resistivity for the lowest temperature annealed samples. As the annealing temperature was increased, the InP samples exhibited high mobility (of the order of 3000 cm2 V-1 s-1 ) and low resistivity, for both species of implanted ion. X-ray diffraction measurements indicated a region of expansion for both As+ and P+ implantations. The strain was annealed out at a temperature of 600°C. Time resolved femtosecond differential reflectivity on unimplanted as well as implanted samples revealed a marked transformation of the carrier dynamics, induced by the implantation and the following annealing steps
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction; annealing; arsenic; carrier mobility; electrical resistivity; indium compounds; ion implantation; phosphorus; rapid thermal annealing; reflectivity; semiconductor doping; time resolved spectra; 30 s; 400 to 700 degC; As+ implantation; Hall effect; InP samples; InP:As; InP:P; P+ implantation; X-ray diffraction; annealed indium phosphide; annealing temperature; carrier dynamics; electrical properties; mobility; optical properties; optoelectronic properties; rapid thermal annealing; resistivity; strain; time resolved femtosecond differential reflectivity; Capacitive sensors; Conductivity; Hall effect; Indium phosphide; Particle beam optics; Rapid thermal annealing; Reflectivity; Temperature; Ultrafast optics; X-ray diffraction;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939214
