Title :
Temperature dependence of DC and microwave characteristics of InGaAs/InP composite channel HEMTs
Author :
Liu, Y. ; Wang, H. ; Radhakrishnan, K. ; Ng, G.I. ; Xiong, Yong Zhong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
30 Nov.-2 Dec. 2005
Abstract :
Submicron high electron mobility transistors (HEMTs) lattice-matched to InP with InGaAs/InP composite channel were fabricated. Temperature dependence of DC and RF characteristics of the HEMTs were studied in the temperature range from 20 to 100 °C. It has been found that the DC and microwave characteristics of the composite channel HEMTs are insensitive to the temperature. In particular, an increase in the maximum frequency of oscillation (fmax) was observed at elevated temperature. The InP HEMTs with an InGaAs/InP composite channel shown good thermal stability. The device may have great potential to be operated with a wide temperature range for microwave applications.
Keywords :
III-V semiconductors; composite materials; gallium arsenide; high electron mobility transistors; indium compounds; microwave transistors; thermal stability; 20 to 100 degC; InGaAs-InP; composite channel HEMT; composite channel fabrication; high electron mobility transistors; microwave characteristics; oscillation maximum frequency; temperature dependence; thermal stability; Degradation; Electron mobility; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Microelectronics; Microwave devices; Radio frequency; Temperature dependence; HEMT; InP; Microwave characteristics; composite channel; temperature dependence;
Conference_Titel :
Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9372-4
DOI :
10.1109/RFIT.2005.1598912
