Title :
A DDS-oriented phase-to-amplitude converter using a SiGe:C bipolar transistors differential pair
Author :
Thuries, Stéphane ; Tournier, Eric
Author_Institution :
Lab. d´´Analyse et d´´Archit. des Syst., Toulouse, France
fDate :
30 Nov.-2 Dec. 2005
Abstract :
A phase-to-amplitude converter using a bipolar transistor differential pair with an 8-bits digital-to-analog converter is reported. This technique provides significant saving in power consumption and die size due to the elimination of the ROM and/or complex compute circuit. It renders the design of direct digital synthesizer usable for microwave wireless systems. The circuit has been processed in 0.25 μ BiCMOS SiGe: C technology. The measured rejection for the first and the second harmonic is respectively -37 dBc and -63 dBc. The 8-bits D/A converter integral non-linearity and differential non-linearity errors are under 1 LSB. The circuit power consumption is 115 mW and operates from a single 2.7 V supply.
Keywords :
BiCMOS integrated circuits; bipolar transistors; digital-analogue conversion; direct digital synthesis; germanium alloys; microwave circuits; silicon alloys; 115 mW; 2.7 V; BiCMOS; D-A converter integral nonlinearity; DDS-oriented phase-to-amplitude converter; bipolar transistors differential pair; differential nonlinearity errors; digital-to-analog converter; direct digital synthesizer; microwave wireless systems; power consumption saving; second harmonic; BiCMOS integrated circuits; Bipolar transistors; Clocks; Energy consumption; Frequency; Germanium silicon alloys; Read only memory; Signal generators; Silicon germanium; Synthesizers;
Conference_Titel :
Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9372-4
DOI :
10.1109/RFIT.2005.1598913
