Spectral properties of angled-grating high-power semiconductor lasers

Author

Sarangan, Andrew M. ; Wright, Malcolm ; Marciante, John R. ; Bossert, David J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

344

Abstract

The beam quality in high-power semiconductor lasers are generally limited by filamentation and weak lateral mode control. The use of grating has recently been explored in a variety of ways. The α-DFB laser in particular has been demonstrated to have diffraction limited beam qualities and high power levels. The optical cavity of the α-DFB laser is shaped like a parallelogram several hundred microns wide by a few millimeters long. A wide stripe of grating is etched along the length of the cavity and oriented at an angle to the facets

Keywords

diffraction gratings; distributed feedback lasers; laser beams; semiconductor lasers; α-DFB laser; 980 nm; angled-grating high-power semiconductor lasers; beam quality; diffraction limited beam qualities; etched; filamentation; high power levels; high-power semiconductor lasers; optical cavity; spectral properties; weak lateral mode control; Diffraction; Distributed feedback devices; Gratings; Laser beams; Laser feedback; Laser modes; Optical materials; Pulse modulation; Semiconductor lasers; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737871

Filename

737871