DocumentCode
3319783
Title
Measurement of the damage profile of ion-implanted GaAs using an optical method
Author
Gal, M. ; Wengler, M.C. ; Ilyas, S. ; Rofii, I. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
fYear
2000
fDate
2000
Firstpage
145
Lastpage
148
Abstract
We describe an easy-to-use, computer controlled, optical method, based on differential reflectance, capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si implanted GaAs. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95)
Keywords
III-V semiconductors; gallium arsenide; ion beam effects; ion implantation; reflectivity; semiconductor doping; silicon; vacancies (crystal); GaAs:Si; Si implanted GaAs; TRIM95; computer controlled optical method; damage profile; differential reflectance; ion-implanted GaAs; ion-implanted semiconductors; total vacancy profiles; transport of ions in matter; Chemicals; Energy measurement; Etching; Gallium arsenide; Optical computing; Optical control; Optical modulation; Optical sensors; Particle beam optics; Reflectivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939216
Filename
939216
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